On the Enhanced Phosphorus Doping of Nanotextured Black Silicon

The integration of nanotextured black silicon (B-Si) into solar cells is often complicated by its enhanced phosphorus doping effect, which typically attributed to increased surface area. In this article, we show that B-Si's surface-to-volume ratio, or specific area (SSA), directly related reactivity, a better indicator reduced sheet resistance. We investigate six B-Si conditions with varying dimensions based on two morphology types prepared using metal-catalyzed chemical etching and reactive-ion etching. demonstrate for POCl 3 diffusion, resistance decreases increasing SSA, regardless 2-D dopant contrast imaging different textures similar areas also indicates the extent SSA. 3-D diffusion simulations nanocones both radial within texture feature metallurgical junction depth in underlying substrate increase suggest SSA should be considered more readily when studying cells.